Joe F. McGlone, Ph.D

Dr. Joe McGlone joined at the start of 2023 as a Research Scientist and a member of the technical staff in the Institute for Materials Research (IMR). His research interests are in wide bandgap materials and devices. He has expertise in the growth (MBE), processing, and device characterization of ß-Ga2O3 as well as experience with GaN technology. He works with multiple faculty, staff, and graduate students to support a variety of projects in the Center for Wide Bandgap Semiconductors. With 8 years of experience in processing, he is available to help with process development at NTW for students looking for advice and guidance.

Prior to joining IMR, Joe received his PhD in 2022 in the Electrical and Computer Engineering department working under Prof. Ringel on the impact of electrically active defects and radiation effects on wide bandgap transistors. During his time as a graduate student, he was supported by three different fellowships, including the NSF Graduate Research Fellowship. He also has an M.S. from OSU (2020) and a B.S. from Rochester Institute of Technology in Microelectronic Engineering.