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With over 20 years of experience in semiconductor materials epitaxy, fabrication and structural and electrical characterization, Dr. Carlin has served as Associate Director of Nanotech West Laboratory, OSU’s primary micro- and nano-fabrication facility, since 2012 and as an OSU PI and member of the technical staff of the Institute for Materials Research (IMR) since 2007. As Associate Director at NTW his main responsibilities include overseeing the operation of the NTW Class 100 cleanroom, managing the NTW metalorganic chemical vapor deposition (MOCVD) laboratory and interfacing with external research customers to provide project and process support.

Prior to joining OSU in 2007, John worked as a research scientist at start-up AmberWave Systems Corporation (developing engineered Si substrates using SiGe epitaxy for application to novel strained Si FET structures and the integration of optical devices on Si), LED manufacturer CREE, Inc. (developing next generation high brightness GaN-based blue and green light emitting diodes) and at the Air Force Research Labs in Dayton, OH (Materials and Manufacturing Directorate). With considerable experience in the epitaxial deposition (MOCVD and MBE) and metrology of metamorphic and mismatched materials and interfaces (including III-V/Si, InAsP/InP, GaN/SiC, SiGe/Si and III-V/Ge) and the design, fabrication and performance characterization of semiconductor devices including high efficiency multijunction photovoltaics, Dr. Carlin’s current research interests include: heterogeneous integration of electronic materials for application to optoelectronics, energy conversion, sensing and high speed devices; substrate engineering; relaxed buffers for lattice engineering and device applications; metalorganic chemical vapor deposition; characterization of defects in semiconductors; and photovoltaics.

John received his Ph.D. from OSU in Electrical and Computer Engineering in 2001 under Prof. Steven Ringel working on the modeling, epitaxy, processing and characterization of single and dual junction III-V solar cells on Si for space applications.